cadmium telluride doped with halide - to increase resistivity and form radiation detector

摘要

Radiation detector is made by doping CdTe throughout its volume with a halide, esp. TeBr or TeI4 to increase its electrical resistivity and after cutting up the pieces are sensitised at least on part of their surface using a chemical bath, pref. contg. AgCN, KCN and NH4OH to create a thin conducting film of the Te on which a metallic layer is electroposited. The thin film of Tl provides a sufficient electrode for the electrodeposition step, without the need to sacrifice resistivity of the CdTe so that an electroplated current collector can be formed.