发明名称 |
Transistor having high f{hd t {b at low currents |
摘要 |
A transistor structure capable of high frequency operation with low collector currents is obtained by fabricating the transistor using nitride techniques to minimize the emitter area and base width area beyond that obtainable by conventional masking techniques. The emitter is surrounded on three sides by low capacitance dielectric which reduces its emitter-to-collector capacitance and hence improves high frequency performance.
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申请公布号 |
US4067037(A) |
申请公布日期 |
1978.01.03 |
申请号 |
US19760676019 |
申请日期 |
1976.04.12 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
GREIFF, PAUL |
分类号 |
H01L21/033;H01L29/08;H01L29/10;H01L29/732;(IPC1-7):H01L29/72;H01L27/02;H01L27/12 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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