| 摘要 |
A diffusion self-aligned, short channel device may be fabricated by ion implantation of an n-type channel region within a p-type substrate. A p-type dopant is then implanted in and driven through a portion of the n-type channel region to form an impurity region. A diffusion self-aligned n-type channel region is then disposed in the p-type impurity region and in the n-type channel region. The method allows for the simultaneous fabrication of a channel implanted MOSFET as well as a standard MOSFET. The resulting diffusion self-aligned, short channel device is a high gain, high speed small device which can be simply combined and fabricated with channel-implanted depletion devices and low body effect devices in an integrated circuit.
|
