发明名称 UN DISPOSITIVO SEMICONDUCTOR PERFECCIONADO.
摘要 <p>Semiconductor device in which information representing packets of charge carriers are stored and transferred in the bulk of a semiconductor layer and comprising one or more read-out insulated gate field effect transistor structures having their channel regions located above the storage sites the current flow between a transistor source and drain constituting non-destructive read-out of the charge content of the storage site underliving the transistor channel region.</p>
申请公布号 ES449176(A1) 申请公布日期 1977.12.01
申请号 ES19760004491 申请日期 1976.06.23
申请人 N. V. PHILIPS'GLOEILAMPENFABRIEKEN 发明人
分类号 H01L29/762;G11C19/28;G11C27/04;H01L21/339;H01L21/8247;H01L27/148;H01L29/768;H01L29/788;H01L29/792;H04N5/335;(IPC1-7):01L/ 主分类号 H01L29/762
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