发明名称 |
UN DISPOSITIVO SEMICONDUCTOR PERFECCIONADO. |
摘要 |
<p>Semiconductor device in which information representing packets of charge carriers are stored and transferred in the bulk of a semiconductor layer and comprising one or more read-out insulated gate field effect transistor structures having their channel regions located above the storage sites the current flow between a transistor source and drain constituting non-destructive read-out of the charge content of the storage site underliving the transistor channel region.</p> |
申请公布号 |
ES449176(A1) |
申请公布日期 |
1977.12.01 |
申请号 |
ES19760004491 |
申请日期 |
1976.06.23 |
申请人 |
N. V. PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
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分类号 |
H01L29/762;G11C19/28;G11C27/04;H01L21/339;H01L21/8247;H01L27/148;H01L29/768;H01L29/788;H01L29/792;H04N5/335;(IPC1-7):01L/ |
主分类号 |
H01L29/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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