NEW ANTIOXIDANTS FOR POST-CMP CLEANING FORMULATIONS

摘要

PROBLEM TO BE SOLVED: To provide a cleaning composition associated with improvement that microelectronics industry continues to seek in cleaning formulations for copper-metallized substrates, and in compositions for processing of microelectronic device structures, including compositions variously useful for post-etching cleaning, post-ashing cleaning and post-chemical mechanical polishing cleaning of microelectronic device wafers.SOLUTION: This invention relates to a cleaning composition and method for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having the residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.SELECTED DRAWING: None