SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a transistor with small parasitic capacity.SOLUTION: A manufacturing method for a semiconductor device comprises: forming a first insulator, a first oxide semiconductor, and a first conductor; forming a second conductor by processing the first conductor; forming a second oxide semiconductor by processing the first oxide semiconductor; forming a second insulator on the second conductor; forming a third insulator on the second insulator; forming a fourth insulator on the third insulator; exposing a part of the third insulator by processing selectively the fourth insulator; exposing a part of the second insulator by processing selectively the exposed third insulator; exposing a part of the second conductor by processing selectively the exposed second insulator; exposing a part of the second oxide semiconductor by processing selectively the exposed second conductor; forming a fifth insulator on the second oxide semiconductor and the fourth insulator; forming a third conductor on the fifth insulator; and performing chemical mechanical polishing to expose an upper surface of the fourth insulator.SELECTED DRAWING: Figure 1