| 摘要 |
A positive-temperature-coefficient potential is developed by scaling up from the potential difference appearing between the base electrodes of two transistors with interconnected emitter electrodes constrained by a positive feedback loop to operate with different densities of current flow through their respective base-emitter junctions. This positive-temperature-coefficient potential is added to a negative-temperature-coefficient potential derived from the base-emitter offset potential of one of the transistors, to provide the reference potential.
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