MESA diode manufacture - with side passivation effected in bulk process

摘要

Semiconductor diode esp. of the 'PIN' type, and parallele-piped shape has a thick dielectric layer covering the major part of its sides and a layer of intrinsic semiconductor material extending to the sides of the diode. The surfaces of this material are covered completely with dielectric passivating material. The diode is made by a process including (a) >=1 step in which a grid of double grooves is cut, penetrating to a depth extending through the major part of the thickness of the material, (b) one step in which the grooves are filled with passivating dielectric material and (c) one step in which the diodes are sepd. by sawing through the planes sepng the double grooves, such that each dielectric filled groove forms a passivating region surrounding the edges of the diced diodes. The mfr. of the passivated edge is effected en masse rather than individually after dicing. without forming cracks in the dielectric during subsequent oven curing or fracture when cut after curing.