| 摘要 |
In an oxide film isolation process wherein a groove portion is formed in that region of a semiconductor substrate in which an isolation layer is to be formed, oxygen or nitrogen is implanted into the groove portion by ion implantation so as to form an insulating layer beneath the groove portion, and the groove portion is thereafter oxidized to thus form an oxide of the semiconductor substrate in a manner to join the oxide and the insulating layer, whereby the area in a semiconductor chip surface as occupied by the isolation layer can be made small to enhance the density of integration of an integrated circuit.
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