Four zone thyristor with at least one gate - has intermediate weakly doped zone between base zone and outer emitter zone

摘要

Thyristor with at least four zones of alternate opposite conductivity type, and at least one gate (control electrode) is proposed. The thyristor is designed to provide reliable and faultless switching without detriment to its other properties. To this end, between the base (control) zone and the adjacent outer emitter zone an intermediate weakly doped zone is provided and is of the same conductivity type as the base (control) zone. Lands are provided for short-circuiting the intermediate zone and the emitter zone. These lands are specifically designed in planar configuration.