发明名称 HALFGELEIDEND KERAMISCH MATERIAAL.
摘要 <p>1526152 Semiconductive ceramics MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 17 Jan 1977 [20 Jan 1976 28 Jan 1976 13 Feb 1976 (2) 16 March 1976 (3) 10 April 1976] 01797/77 Heading C1J A composition comprising at least two of Cu 2 0, Bi 2 O 3 , MnO 2 and Li 2 CO 3 is thermally diffused as an insulating layer in the grain boundaries in a polycrystalline ceramic semi-conductor composed mainly of SrTiO 3 . Small amounts of Nb 2 O 5 and Ta 2 O 5 may be present in the SrTi0 3 .</p>
申请公布号 NL7700357(A) 申请公布日期 1977.07.22
申请号 NL19770000357 申请日期 1977.01.14
申请人 MATSUSHITA ELECTRIC INDUSTRIAL COMPANY LIMITED TE OSAKA, JAPAN. 发明人
分类号 C04B35/47;H01B1/08;H01G4/12;(IPC1-7):04B35/46;01G4/12 主分类号 C04B35/47
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