| 摘要 |
1475320 Semiconductor devices SONY CORP 18 June 1974 [21 June 1973] 26994/74 Heading H1K A thyristor comprising, in sequence and preferably in lateral relationship, n-type cathode region 1, respective p and n type first and second base regions 2, 3 and p type anode region 4 has a p type fifth region 5 isolated from the other p type regions 2, 4 by the n type region 3 and electrically connected to the cathode region 1, e.g. via cathode metallization 7K and p type zone 12/12<SP>1</SP>. This arrangement effectively places a third transistor 4/3/5 in the thyristor equivalent circuit, with its emitter-collector path connected between the anode and cathode, thereby improving the current-control capacity of the thyristor. A positive potential on gate 7G1 connected to first base region 2 switches the device on, while a negative potential on gate 7G1 switches it off. In a modification a p type sixth region (6) Fig. 3 (not shown) bearing a second gate electrode (7G2) is provided within the n type cathode region (1), effectively placing a fourth transistor (Tr 4 ) Fig. 4 (not shown) in the equivalent circuit. Switch-on is effected by a positive potential on first gate (G1) with second gate (G2) floating, and for switching off (G2) is shorted to the cathode (K) and a negative potential is applied to (G1). The operation of both embodiments is discussed in detail. |
