| 摘要 |
A method of producing a ribbon of polycrystalline silicon, which includes contacting a moving surface carrying a layer of particulate semiconductor silicon, with a gaseous silicon source, is disclosed. The gaseous silicon source permeates the layer of particulate silicon and, with heat applied, deposits silicon that knits the silicon particles together to a continuous, coherent polycrystalline ribbon. The ribbon is then separated from the moving surface for further processing, for example, conversion to monocrystalline silicon.
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