| 发明名称 |
HALBLEITERBAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG |
| 摘要 |
An oxygen or nitrogen ion beam is implanted into a polycrystalline silicon or in an amorphous silicon layer, or a single crystal device body or layer, on a semiconductor substrate to an extent sufficient to convert the polycrystalline silicon layer, the amorphous layer or the single crystal device body or layer into a semi-insulating layer having a resistivity of 107 to 1011 ohm-cm, which has improved passivation property. |
| 申请公布号 |
DE2617397(A1) |
申请公布日期 |
1976.11.04 |
| 申请号 |
DE19762617397 |
申请日期 |
1976.04.21 |
| 申请人 |
SONY CORP. |
发明人 |
AOKI,TERUAKI;MATSUSHITA,TAKESHI;MIFUNE,TADAYOSHI;HAYASHI,HISAO |
| 分类号 |
H01L27/04;H01L21/00;H01L21/265;H01L21/314;H01L21/316;H01L21/318;H01L21/329;H01L21/331;H01L21/76;H01L21/822;H01L23/29;H01L23/31;H01L29/73;H01L29/78;H01L29/8605;(IPC1-7):H01L21/265 |
主分类号 |
H01L27/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
