发明名称 Barrier formation in semiconductor - by cutting slot in semiconductor and then diffusing two layers simultaneously on its either side
摘要 <p>The barrier formation in a semiconductor provides isolation without the disadvantages of deep diffusion. Central areas are isolated from peripheral regions preventing arcing to ground. Formation of the barrier is by cutting a slot (20) in the semiconductor. Two layers (2, 3, 21) are then simultaneously diffused either side of the semiconductor and around the slot itself. The slot is cut, preferably with a diamond saw, to a depth of about one hundred microns, the diffusion depth being of the order of seventy microns. diffusion is followed by an annealing stage and cutting into basic chips.</p>
申请公布号 FR2410363(A1) 申请公布日期 1979.06.22
申请号 FR19770035733 申请日期 1977.11.28
申请人 SILICIUM SEMICONDUCTEUR 发明人
分类号 H01L21/761;H01L21/78;H01L29/06;(IPC1-7):01L21/76 主分类号 H01L21/761
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