| 发明名称 |
SEMICONDUCTOR MEMORY ELEMENT |
| 摘要 |
PURPOSE:A semiconductor memory constructed from FET which has the gate construction of MIOS type writing O by the avalanche injection and 1 by the tunnel effect. |
| 申请公布号 |
JPS5245287(A) |
申请公布日期 |
1977.04.09 |
| 申请号 |
JP19760087196 |
申请日期 |
1976.07.23 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
NISHI YOSHIO;NOJIMA ISAO |
| 分类号 |
H01L21/8247;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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