LED with MIS structure using electron pairs recombination - generates intermittent minority carriers and separates them by gate electrodes

摘要

The light is generated by the light emitting diode by recombination of tunnelling electron pairs in semiconducting monocrystals. The generation of minority carriers in a MIS structure is carried out intermittently. The minority carriers generating zone is spatially separated from the light generating recombination zone by gate electrods. The charge transfer is controlled by the potential applied at the respective gate electrode. Alternately the generation and the recombination zones are isolated by a separating electrode under suitable potential. This potential may be possibly used for the charge transfer control. Charges in oxide layer may be also used for the electri isolation of the two zones.