Method of making MES type field effect transistor using III-V compound semiconductor.

摘要

After a silicon nitride film (21) is deposited on a compound semiconductor substrate (20), another insulating film (22) such as a silicon dioxide film is provided thereon so as to define a channel region (26) in the semiconductor substrate (22). Impurity ions such as Si ions are selectively implanted into the semiconductor substrate (20) in the presence of the silicon nitride film (21) and the insulating film (22), thereby providing drain and source regions (24, 25) and the channel region (26) therein. The insulating film (22) and the silicon nitride film (21) located above the channel region (26) are successively removed to provide a Schottky gate electrode (31) thereon. The silicon nitride film (21) is selectively removed from the substrate surface to provide drain and source electrodes (29, 30) on their regions (24, 25). Accordingly, MES FETs can be produced without exposing the substrate surface during its manufacture.