| 发明名称 |
MOSSTYPE TRANSISTOR CIRCUIT |
| 摘要 |
PURPOSE:To obtain the MOS-type transistor circuit which can materialize the MOS-type transistor resistance having very small resistance value variation. |
| 申请公布号 |
JPS5234683(A) |
申请公布日期 |
1977.03.16 |
| 申请号 |
JP19750100441 |
申请日期 |
1975.08.18 |
| 申请人 |
MATSUSHITA ELECTRONICS CORP |
发明人 |
ARITA SHIGERU;KAYAHARA MASAO |
| 分类号 |
H01L27/04;H01L21/822;H01L27/092;H01L29/78;H03K17/687 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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