Bulk channel charge transfer device

摘要

The invention relates to a charge-coupled device with charge transport in the bulk of the semiconductor body. The semiconductor layer in which the transport takes place comprises a comparatively low-ohmic surface zone present below the electrodes and an adjoining comparatively high-ohmic layer present below the surface zone. A comparatively large number of charge carriers can be concentrated in the surface zone with a comparatively low clock voltage. The last fraction of charge carriers to be transferred which mainly determine the transport rate can be transported from one storage space to the next storage space via the high-ohmic layer at a large distance from the electrodes and hence in a very short time.