| 摘要 |
A semiconductor light emitting apparatus comprised of a semiconductor light emitting device (100) having a layered semiconductor layer (110) configured by layering at least two or more semiconductor layers (103), (105) and a light emitting layer (104) to emit first light, and a wavelength conversion member that covers at least a part of the semiconductor light emitting device (100), absorbs at least a part of the first light and that emits second light with a wavelength different from that of the first light, characterized in that the semiconductor light emitting device (100) is provided with a fine structure layer, as a component, including dots comprised of a plurality of convex portions or concave portions extending in the out-of-plane direction on one of main surfaces forming the semiconductor light emitting device (100), the fine structure layer forms a two-dimensional photonic crystal (102) controlled by at least one of a pitch among the dots, a dot diameter and a dot height, and that the two-dimensional photonic crystal (102) has at least two or more periods each of 1 µm or more. |
