GATE ELECTRODE OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A gate electrode of a semiconductor device and a method for forming the same are provided to prevent an ion penetration phenomenon by diffusing uniformly dopant ions. CONSTITUTION: A well and a field oxide(32) are formed on a wafer(31). An oxide layer(33), a buffer polysilicon layer(34) doped with the first dopant ions, and a polysilicon layer are laminated sequentially on a predetermined region of the wafer(31). The polysilicon layer is doped with the second dopant ions with a polarity opposite to the first dopant ions of the buffer polysilicon layer(34). In the laminating process, the oxide layer(33) is applied on the wafer(31). The buffer polysilicon layer(34) doped with the first dopant ions is applied on the oxide layer(33). An undoped polysilicon layer is applied on the buffer polysilicon layer(34). The second dopant ions are implanted into the undoped polysilicon layer. A heat treatment process for the wafer(31) is performed. A gate electrode is formed by performing a gate pattering process on the wafer(31).