发明名称 |
Via structure in an integrated circuit utilizing a high conductivity metal interconnect and a method for manufacturing same |
摘要 |
A method and system for providing a via structure for an integrated circuit is disclosed. The method and system includes providing a high conductivity metal that forms a metal structure consisting of the high conductivity metal. The method and system also includes a dielectric material surrounding the high conductivity metal. The dielectric material includes sidewalls to form a via hole. The method and system also include providing a via plug material other than the high conductivity metal. The via plug material covers the high conductivity metal and substantially fills the via hole. The via plug material substantially covers a base portion of the high conductivity metal and the sidewalls of the via hole. The via plug material is for gettering the high conductivity metal sputtered on the sidewalls of the via hole.
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申请公布号 |
US6331732(B1) |
申请公布日期 |
2001.12.18 |
申请号 |
US19990439948 |
申请日期 |
1999.11.12 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GUPTA SUBHASH;CHEN SUSAN HSUCHING |
分类号 |
H01L21/768;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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