发明名称 LATERAL TRANSISTOR AND ITS PROCESS
摘要 PURPOSE:To insure fully pressure-tight and to offer lateral transistor, of which hEF does not decline, as well as its process.
申请公布号 JPS5216982(A) 申请公布日期 1977.02.08
申请号 JP19750091924 申请日期 1975.07.30
申请人 HITACHI LTD 发明人 NAKAGOME YOSHIYUKI
分类号 H01L29/73;H01L21/331;H01L29/735 主分类号 H01L29/73
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