VARIABLE RESISTANCE NON-VOLATILE MEMORY CELL AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an integrated circuit memory cell manufacturing method and an integrated circuit memory cell. SOLUTION: The integrated circuit memory cell is manufactured by forming an ohmic film on the surface of the upper part of a conductive structure so as to further extend from the structure along at least part of the side wall of an opening inside an insulating film. An electrode film is formed on the ohmic film. A variable resistance material film is formed on the insulating film and electrically connected to the electrode film. COPYRIGHT: (C)2009,JPO&INPIT