| 摘要 |
A thin layer, with a relatively low active donor concentration (e.g. <5 x 1017 per cm3), is produced in a slice of a Group III-V semiconductor material doped, with a Group VI dopant to a relatively high active donor concentration (e.g. >1018 per cm) by maintaining the slice in a nonreacting atmosphere at an elevated temperature. The temperature is such that the equilibrium vapor pressure of the Group III constituent is greater than the equilibrium vapor pressure of the Group V constituent. Such materials are used, for example, in the fabrication of mm-wave Schottky barrier mixer diodes.
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