发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PURPOSE:To extend operation range by providing a potential generation circuit on the gate of a load Tr so as to deteriorate the current driving ability of the load Tr of a sense amplifier by means of the rise of the power source voltage. CONSTITUTION:In a gate of a load Tr13 of the sense amplifier on a reference side, the output of a potential generation circuit 18 to which the output voltage depends on is connected to a power source voltage vcc. Therefore, the value of output voltage VL increases accompanied by the increase of the power source voltage vcc. When this output voltage VL enters the gate of the load Tr13, the current driving ability of the load Tr13 deteriorates inversely by the increase of the power source voltage vcc. The deterioration of the current driving ability of the load Tr13 means the rise of the resistance value on the operation of the load Tr13, and the value of the sense amplifier output 12 Vref deteriorates. Thus, the operation range is extended and the operation can be performed from low voltage to high voltage.</p>
申请公布号 JPH04153997(A) 申请公布日期 1992.05.27
申请号 JP19900277491 申请日期 1990.10.15
申请人 MITSUBISHI ELECTRIC CORP 发明人 HONMA TAKESHI;NOGUCHI KENJI
分类号 G11C17/00;G11C16/06;H01L27/10;H01L29/78 主分类号 G11C17/00
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