| 摘要 |
<p>The storage plate of a DRAM cell capacitor is formed from a thin polycrystalline silicon layer. Oxide and nitride layers are formed thereon, followed by masking and removal of the oxide and nitride layers in regions other than the capacitor locations. The entire surface of the device is then oxidized, forming a thin oxide layer over the nitride layer at the capacitor locations, and oxidizing the exposed polycrystalline silicon regions. This forms oxide isolation of the capacitor charge storage plates, and provides an oxide-nitride-oxide dielectric for the capacitor. <IMAGE></p> |
