| 摘要 |
1,115,105. Semi-conductor devices; capacitors. SIEMENS A.G. 17 March, 1966 [18 March, 1965], No. 11634/66. Heading H1K. In the manufacture of microplanar transistors each processed semi-conductor wafer is alloyed to a rung of a gilded iron-cobalt-nickel alloy ladder-like carrier 1 to form one electrode of the transistor. Silver wires 2 are spot welded across the ladder adjacent the rungs, and emitter and base leads are thermocompression bonded between these and contact areas on the transistor. That aide of the carrier bearing the transistors is then enveloped in an oven hardened potting compound such as an epoxy resin so that the devices and their leads are covered. The side member of the carrier is then cut away and the resin cut through between transistors to leave these secured to the remaining part of the carrier by the electrode connections. So that the transistors may subsequently be readily handled the remaining side of the carrier is encapsulated and then cut through between the groups of connections for each transistor, Fig. 6 (not shown). This encapsulation may utilize epoxy resins, silicone resins, polyester resins, low-melting point glasses, ceramics, or inorganic cements. An alternative carrier (Fig. 2, not shown) has the silver wires replaced by narrow rungs adjacent the main rungs and integral with the carrier which is punched from foil. Instead of transistors it is possible to similarly mount microplanar diodes, integrated circuits, resistors and capacitors. |
