| 发明名称 |
METHOD OF FORMING SILICON OXIDE COATINGS IN AN ELECTRIC DISCHARGE |
| 摘要 |
This is a method of depositing a coherent solid layer of an oxide of silicon deposited upon a surface of a substrate by establishing a glow discharge adjacent to said surface in an atmosphere containing a gaseous compound of the element or elements comprising the material.
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| 申请公布号 |
US3655438(A) |
申请公布日期 |
1972.04.11 |
| 申请号 |
USD3655438 |
申请日期 |
1969.10.20 |
| 申请人 |
INTERNATIONAL STANDARD ELECTRIC CORP. |
发明人 |
HENLEY FRANK STERLING;RICHARD CHARLES GEORGE SWANN |
| 分类号 |
C23C16/507;H01L21/316;(IPC1-7):H01B1/04;B44D1/34;B44D1/02 |
主分类号 |
C23C16/507 |
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