| 摘要 |
PURPOSE:To readily perform uniform etching, ashing and depositing by providing a pair of discharging electrode in a reaction tube, connecting a high frequency power source, and connecting a rectangular wave low frequency pulse generation source, thereby moving a plasma in a simple operation. CONSTITUTION:When a high frequency power source 4 is energized, a high frequency energy is input through a matching circuit 3 to discharging electrodes 2-A, 2-B of a reaction tube 1 of a plasma unit 5. On the other hand, a rectangular wave generated from a rectangular wave low frequency pulse generation source 6 is input through a filter circuit 7 to the circuit 3, and a plasma can be moved readily by varying the amplitude/period of the rectangular wave. Accordingly, uniform etching, ashing and depositing can be facilitated. |
