VERFAHREN UND VORRICHTUNG FUER DIE KRISTALLISATION DUENNER HALBLEITERSCHICHTEN AUF EINEM SUBSTRATMATERIAL
摘要
In a process for crystallization of thin semiconductor layers on a substrate material, a melt with a temperature profile is produced in the surface layer of the substrate. The temperature profile has an ''undercooled'' region essentially symmetrical in relation to its centre with a lateral dimension equal to the thickness of the melt. The melt in the surface layer of the substrate material is preferably produced by irradiation with a laser beam in the TEM01 or TEM01* oscillating mode. The process is particularly suitable for crystallization of single crystal silicon regions on silicon-on-insulator (SOI) substrates.
申请公布号
DE3818504(A1)
申请公布日期
1991.01.03
申请号
DE19883818504
申请日期
1988.05.31
申请人
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV, 8000 MUENCHEN, DE