IN SITU DEPOSITION AND INTEGRATION OF SILICON NITRIDE IN A HIGH DENSITY PLASMA REACTOR,申请号KR20000081114-传众专利搜索

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发明名称	IN SITU DEPOSITION AND INTEGRATION OF SILICON NITRIDE IN A HIGH DENSITY PLASMA REACTOR
摘要
申请公布号	KR100726517(B1)	申请公布日期	2007.06.11
申请号	KR20000081114	申请日期	2000.12.23
申请人		发明人
分类号	H01L21/205;C23C16/34;C23C16/40;C23C16/42;C23C16/505;C23C16/56;H01L21/31;H01L21/316;H01L21/318;H01L21/768;H01L23/522	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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