| 摘要 |
PURPOSE:To remove the stress of a polycrystal silicon layer requiring thickness, through which handling is facilitated, and to prevent the warpage of a base body by positioning an insulating film made of SiO2 into the polycrystal silicon layer. CONSTITUTION:An N type vapor growth layer 32 is formed to the main surface of an N type single crystal silicon substrate 31 having low resistance through a vapor growth method, and a film 33 made of a selectively oxidizable substance is shaped to one part of the surface of the N type vapor growth layer 32. Isolation layers 34 made of SiO2 are formed through oxidation treatment as using the film 33 as a mask while an N type silicon region 32a isolated by the isolation layers 34 is shaped. The film 33 is removed through etching, and an oxide film 35 made of SiO2 is molded to the whole surface of the main surface of the semiconductor substrate containing the N type vapor growth layer 32 exposed and the isolation layer 34. The polycrystal silicon layer 36a is formed to the whole surface of the oxide film 35, and an insulating film 37a made of SiO2 and further the polycrystal silicon layer 36b, an insulating film 37b made of SiO2 and the polycrystal silicon layer 36c are alternately stacked and shaped onto the polycrystal silicon layer 36a. The whole is removed in parallel through mechanical polishing and chemical etching processing. |
