发明名称 Infrared transmission large-area shutter
摘要 An infrared transmission large-area shutter is provided. The infrared transmission large-area shutter includes a first contact layer on a substrate, a plurality of stacks formed in a two-dimensional (2D) array pattern on a first region of the first contact layer, each stack comprising a lower reflection layer, an active layer, an upper reflection layer, and a second contact layer which are formed sequentially in this order on the first contact layer, a first electrode formed on the first contact layer, a plurality of second electrodes on the second contact layers, a first polymer layer that surrounds sidewalls of the plurality of stacks on the first contact layer, and a second polymer layer, which is transparent to infrared rays, to cover the second electrode on the second contact layer. A through hole corresponding to the plurality of stacks is formed in the substrate.
申请公布号 US9429775(B2) 申请公布日期 2016.08.30
申请号 US201313947650 申请日期 2013.07.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Lee Sang-hun;Park Chang-young;Kwon Jong-oh;Park Yong-hwa
分类号 G02F1/015;G02F1/017;G02F1/21;H01L31/0224;H01L31/0352;B82Y20/00 主分类号 G02F1/015
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. An infrared transmission large-area shutter comprising: a first contact layer disposed on a substrate; a plurality of stacks formed in a two-dimensional array pattern on a first region of the first contact layer, each stack comprising a lower reflection layer formed on the first contact layer, an active layer disposed on the lower reflection layer, an upper reflection layer formed on the active layer, and a second contact layer formed on the upper reflection layer; a first electrode formed on the first contact layer; a plurality of second electrodes, each of the plurality of second electrodes formed on respective one of the plurality of stacks; a first polymer layer that surrounds sidewalls of each of the plurality of stacks; and a second polymer layer, which is transparent to infrared rays and which covers the plurality of second electrodes on the second contact layer, wherein the substrate comprises a through hole formed through the substrate in a location corresponding to a location of the plurality of stacks, a trench is formed in the first region between each neighboring pair of stacks of the plurality of stacks to define each of the plurality of stacks, and the trench exposes the first contact layer and is completely filled with the first polymer layer, and the first electrode surrounds the plurality of stacks and is spaced apart from each of the plurality of stacks and from the trench in the first region.
地址 Suwon-si KR