| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an antireflection film capable of sufficiently reducing reflectance on an interface between a resist layer and a silicon semiconductor substrate, even if exposure light is made incident obliquely by one layer in a liquid immersion lithography technique, and to provide an exposure method. <P>SOLUTION: The double layer structure antireflection film is used in exposing a resist layer in an exposure system having a wavelength of 190-195 nm and having a numerical aperture of 1.2-1.3, and is formed between the resist layer and a silicon nitride film formed on the surface of the silicon semiconductor substrate. When complex refractive indexes N<SB>1</SB>, N<SB>2</SB>of upper layer and lower layer constituting the antireflection film are expressed by the expressions; N<SB>1</SB>=n<SB>1</SB>-k<SB>1</SB>i, N<SB>2</SB>=n<SB>2</SB>-k<SB>2</SB>i, film thicknesses of the upper layer and lower layer are d<SB>1</SB>, d<SB>2</SB>and a predetermined combination is selected as the combination of values [n<SB>10</SB>, k<SB>10</SB>, d<SB>10</SB>, n<SB>20</SB>, k<SB>20</SB>, d<SB>20</SB>], n<SB>1</SB>, k<SB>1</SB>, d<SB>1</SB>, n<SB>2</SB>, k<SB>2</SB>, d<SB>2</SB>satisfy the following relation: ä(n<SB>1</SB>-n<SB>10</SB>)/(n<SB>1m</SB>-n<SB>10</SB>)}<SP>2</SP>+ä(k<SB>1</SB>-k<SB>10</SB>)/(k<SB>1m</SB>-k<SB>10</SB>)}<SP>2</SP>+ä(d<SB>1</SB>-d<SB>10</SB>)/(d<SB>1m</SB>-d<SB>10</SB>)}<SP>2</SP>+ä(n<SB>2</SB>-n<SB>20</SB>)/(n<SB>2m</SB>-n<SB>20</SB>)}<SP>2</SP>+ä(k<SB>2</SB>-k<SB>20</SB>)/(k<SB>2m</SB>-k<SB>20</SB>)}<SP>2</SP>+ä(d<SB>2</SB>-d<SB>20</SB>)/(d<SB>2m</SB>-d<SB>20</SB>)}<SP>2</SP>≤1. <P>COPYRIGHT: (C)2007,JPO&INPIT |
