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摘要

1305803 Semiconductor devices GENERAL ELECTRIC CO 21 Jan 1970 [21 Jan 1969] 44088/72 Divided out of 1305802 Heading H1K The subject matter of this Specification is fully disclosed in copending Specification 1,305,802 but the claims relate to a semiconductor device comprising an IGFET and a conductorinsulator-semiconductor (CIS) capacitor formed in a common semiconductor substrate 31 by the provision of a conductive layer 32 over an insulating layer 30 on the substrate 31. Portions 34, 37 of the conductive layer lying in depressions 30a, 30b which extend partly through the insulating layer 30 from the gate of the IGFET and the conductor of the CIS capacitor respectively are joined by an elongate intermediate portion 33 overlying the thicker part of the insulating layer 30.