发明名称 RETICLE FOR CHARGED PARTICLE BEAM EXPOSURE DEVICE, DESIGNING METHOD AND APPARATUS THEREOF, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a reticle for charged particle beams for solving the problem of complementary patterns that a scattering stencil type reticle has without essentially deteriorating the performance of a device to be manufactured. <P>SOLUTION: In the reticle shown in (f), one sub field is divided into a scattering stencil region A and a membrane region B. In the scattering stencil region A, and the membrane region B, a scattering stencil type pattern and a membrane type pattern are formed, respectively. The former and latter are used for a part having a critical pattern and a pattern without requiring any precision, respectively, thus reducing the need for a complementary pattern and improving throughput. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005209750(A) 申请公布日期 2005.08.04
申请号 JP20040012546 申请日期 2004.01.21
申请人 NIKON CORP 发明人 SHIMIZU SUMUTO
分类号 G03F1/20;G03F1/68;G03F7/20;H01J37/305;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/20
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