| 摘要 |
PURPOSE:To obtain a In compound useful as an electric material by irradiating a chalcophylite-type compound containing In with energy beam having a value not lower than a prescribed value in a vacuum or an inert gas for a required time. CONSTITUTION:A compound containing chalcogen (S, Se or Te), e.g. a chalcophylite-type compound such as CuInSe2, CuGaSe2 or CuGaxIn1-xSe2 as an In compound has hitherto been utilized as an electric material such as solar cell. A chalcophylite-type compound containing In is irradiated with energy beam (e.g. laser beam having 300-1000nm wavelength) having >=4X10W/cm<2> strength in vacuum or an inert gas (e.g. Ar gas) for a required time (e.g. 120-360sec) to provide the novel In compound [e.g. CuxIn(0-x)] having a structure different from that of a conventional compound. This compound can be observed from Raman scattering spectrum produced when various chalcopilite-type compounds containing In are irradiated with strong laser beam. |
