| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of suppressing the occurrence of a crack during CMP of an interlayer insulating film and eliminating the influence of a crack even if it occurs. SOLUTION: After an ozone TEOS film 7 is formed so as to cover the entire surface of a semiconductor substrate, a plasma TEOS film 8 is formed on the ozone TEOS film 7. Then, CMP is performed so that a difference in height between an element formation region FR of the plasma TEOS film 8 and an element non-formation region NFR is reduced. Next, the plasma TEOS film 8 is flattened by etching the entire surface to a predetermined thickness. COPYRIGHT: (C)2009,JPO&INPIT
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