SEMICONDUCTOR DEVICE HAVING HETEROGENEOUS STRUCTURE AND METHOD FORMING THE SAME

摘要

A semiconductor device is provided as follows. A first buffer layer is disposed on a substrate including NMOS and PMOS regions. A first drain and a first source are disposed on the first buffer layer and have heterogeneous structures. A first channel is disposed between the first drain and the first source. A first gate electrode is disposed on the first channel. A second drain and a second source are disposed on the first buffer layer. A second channel is disposed between the second drain and the second source. The second channel includes a different material from the first channel. A second gate electrode is disposed on the second channel. The first drain, the first source, the first channel and the first gate electrode are disposed in the NMOS region. The second drain, the second source, the second channel and the second gate electrode are disposed in the PMOS region.

主权项

1. A semiconductor device, comprising:
a substrate including an NMOS region and a PMOS region; a first buffer layer on the substrate; a first drain and a first source disposed on the first buffer layer and spaced apart from each other, wherein each of the first drain and the source has a heterogeneous structure; a first channel between the first drain and the first source; a first gate electrode on the first channel; a second drain and a second source disposed on the first buffer layer and spaced apart from each other; a second channel disposed between the second drain and the second source and including a different material from the first channel; and a second gate electrode on the second channel, wherein the first drain, the first source, the first channel, and the first gate electrode are disposed in the NMOS region, and the second drain, the second source, the second channel, and the second gate electrode are disposed in the PMOS region.