| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
| 摘要 |
An integrated circuit containing a refractory metallic silicide beneath a field isolation region and in electrical contact with electrical conductive regions of active impurity dopants in a semiconductive substrate; and process for the fabrication thereof. |
| 申请公布号 |
JPS587840(A) |
申请公布日期 |
1983.01.17 |
| 申请号 |
JP19820064848 |
申请日期 |
1982.04.20 |
| 申请人 |
INTERN BUSINESS MACHINES CORP |
发明人 |
RANDOORU DEYUAN AIZATSUKU;TATSUKU HIYUNGU NINGU;DENII DEYUANNRII TANGU |
| 分类号 |
H01L27/10;H01L21/3205;H01L21/331;H01L21/74;H01L21/76;H01L21/762;H01L21/8242;H01L23/52;H01L23/535;H01L27/108;H01L29/06;H01L29/73 |
主分类号 |
H01L27/10 |
| 代理机构 |
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