发明名称 |
DISPLAYING SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a displaying semiconductor device having a structure capable of easily restoring a fault pixel by laser repair. SOLUTION: This displaying semiconductor device is provided with a thin film transistor 1 integrated/formed in matrix on an insulation substrate 0, a metal light shield film 3 patterned so as to shield each thin film transistor 1 from external light and a transparent pixel electrode 2 arranged upward the metal light shield film 3 through a flattening film 10 and electrically connected to the answering thin film transistor 1 through a contact hole. A restoring isolated electrode 7 is provided between the pixel electrodes 2 adjacent to each other, and one side pixel electrode 2 occurring abnormality is made be short-circuited with the other normal pixel electrode 2 by irradiating a laser beam. The isolated electrode 7 is formed by the same layer as the metal light shield film 3.</p> |
申请公布号 |
JPH10161156(A) |
申请公布日期 |
1998.06.19 |
申请号 |
JP19960337563 |
申请日期 |
1996.12.03 |
申请人 |
SONY CORP |
发明人 |
UCHINO KATSUHIDE;ABE FUMIAKI;NAKAYAMA YOSHIKO |
分类号 |
G02F1/136;G02F1/1368;G09F9/30;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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