发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM INCLUDING A VOLTAGE DETECTION BLOCK
摘要 A semiconductor device may include an internal voltage generation circuit including at least one resistor element and a plurality of MOS transistors, and configured to change amounts of current flowing through the plurality of MOS transistors according to a level of the first node and control driving of an internal voltage. The semiconductor device may include an internal circuit configured to operate by being supplied with the internal voltage. The at least one resistor element is electrically coupled between the internal voltage and a first node. The plurality of MOS transistors are electrically coupled between the at least one resistor element and a power supply voltage.
申请公布号 US2016195889(A1) 申请公布日期 2016.07.07
申请号 US201514715698 申请日期 2015.05.19
申请人 SK hynix Inc. 发明人 OK Seung Han
分类号 G05F3/02;H03K17/687 主分类号 G05F3/02
代理机构 代理人
主权项 1. A semiconductor device comprising: an internal voltage generation circuit including at least one resistor element which is electrically coupled between an internal voltage and a first node and a plurality of MOS transistors, and configured to change amounts of current flowing through the plurality of MOS transistors according to a level of the first node and control driving of the internal voltage; and an internal circuit configured to operate by being supplied with the internal voltage, wherein the at least one resistor element is, and wherein the plurality of MOS transistors are electrically coupled between the at least one resistor element and a power supply voltage.
地址 Icheon-si Gyeonggi-do KR