| 摘要 |
PURPOSE:To prevent the electric short-circuiting of a shallow P-N junction provided in a semiconductor substrate and to obtain the semiconductor device being able to operate at a high speed and at high frequency by a method wherein the contact area of a Schottky contact is made to be small to make the height of a potential barrier to be small. CONSTITUTION:An N<+>-type buried region 2 is formed by diffusion in a P-type Si substrate 1, and an N-type colector epitaxial layer 3 is formed on the whole face containing the region 2. The layer 3 is divided by separating SiO2 films 4 into two islandlike regions locating on the region 2. An N<+>-type collector region 8 is formed by diffusion in one side of one of two islandlike layers 3 reaching to the region 2, and a P-type base region 6 is formed by ion implantation in another layer coming in contact with the film 4. Then an N<+>-type emitter region 7 is formed by ion implantation in the region 6, the whole face is covered with an Al film 9 and selective etching is performed to remain the Al film 9 only at the Schottky barrier diode forming part. By this way, the Schottky contact having a small contact area and the potential barrier of desired height ranging from the region 6 to the layer 3 can be obtained, and the whole face is covered with an Al layer 10 containing a very small quantity of Si. |
