FLASH MEMORY DEVICE HAVING A MULTI-LEVELED CELL AND PROGRAMMING METHOD THEREOF

摘要

A flash memory device having a multi-level cell and a data writing method thereof are provided to increase write speed and to reduce the number of erase operations of a block. According to a method for writing data in a flash memory system constituting an address map by a log block mapping scheme, a write pattern of data to be written into a log block(200) is judged. One of an SLC(Single-Leveled Cell) block and an MLC(Multi-Leveled Cell) block is allocated as the log block according to the write pattern. The write pattern includes a sequential write pattern written in a sequential page unit to the log block and a random write pattern written in a random page unit to the log block.