发明名称 |
Bidirectional power fet with integral avalanche protection. |
摘要 |
Lateral FET structure is disclosed for bidirectional power switching, including AC application. Integral avalanche protection is provided by a pair of isolation regions forming protective barrier junctions with a common layer, which junctions are in parallel with the reverse blocking junctions of the power FET in the OFF state and have a lower reverse breakover threshold for protecting the latter. A plurality of integrated FETs each have left and right source regions and left and right channel regions with a common drift region therebetween, and conduct current in either direction according to the polarity of main terminals. |
申请公布号 |
EP0205638(A1) |
申请公布日期 |
1986.12.30 |
申请号 |
EP19850107808 |
申请日期 |
1985.06.25 |
申请人 |
EATON CORPORATION |
发明人 |
BENJAMIN, JAMES ANTHONY;LADE, ROBERT WALTER;SCHUTTEN, HERMAN PETER |
分类号 |
H01L21/764;H01L29/10;H01L29/40;H01L29/78 |
主分类号 |
H01L21/764 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|