| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which can stably and uni formly generate of high electron density low electron temperature a plasma even in the center, and to provide a plasma processing method. SOLUTION: In the plasma processing apparatus comprising a means for holding an object in a plasma process chamber, a means for introducing a gas into the plasma process chamber, a means for exhausting the plasma process chamber, and a means for introducing a microwave for generating a plasma into the plasma process chamber through a waveguide having slots 114 and a dielectric window, the slots 114 are circular and provided with a predetermined angular interval and a predetermined opening angle by punching on a plurality of concentric circles having different radii on the surface in parallel to the microwave magnetic field surface 121 of the waveguide. Where n1 is the number (odd number) of antinodes of a surface standing wave generating between circular slots and λs is the wavelength of the surface wave, the radius difference Δrs between the plurality of concentric circles in nearly Δrs =n1 λs /2. |
