HANDOTAIFUKIHATSUSEIMEMORIOYOBISONOKAKIKOMIHOHO

摘要

A semi-conductor non-volatile memory comprises one or more integrated memory cells. The or each memory cell comprises a first semi-conductor region (101) having a first surface, an electric charge storage structure (104) disposed on the first surface of the first semi-conductor region for storing electric charge, and a first gate (106) provided to electrically connect to the electric charge storage structure. A second semi-conductor region (121) is electrically connected at one side to the first semi-conductor region (101) and has a second surface. A second gate (126) controls the second surface. A third region (122) is electrically connected to the other side of the second semi-conductor region and a random access potential setting means (131 - 133, 135, 136) is connected to the second gate (126) for setting a potential thereof on a random access basis.