发明名称 MANUFACTURE OF SEMICONDUCTOR SUBSTRATE
摘要 <p>PURPOSE:To prevent deterioration generated on the assembly of a semiconductor substrate by forming a scribing groove to a section corresponding to a scribing line in a semiconductor substrate. CONSTITUTION:A photo-resist 2 is applied onto the (111) face of a semiconductor substrate 1 consisting of GaP, windows 3 are bored onto scribing lines in a semiconductor device through a photolithography process, and grooves 4 are formed by a liquid such as the liquid of H2PO4:H2Cl:HNO3=5:3:1. One main surface of the semiconductor substrate 1 is used at the growth rate of a crystal as the constitutional surface of the grooves 4. It is a surface later than a (100) face by 1/10. A light-emitting diode 5 is manufactured onto the (100) face as one main surface of the semiconductor substrate 1, to which the grooves 4 are shaped, through a liquid-phase growth technique. The light-emitting diodes are separated through scribing grooves 6 by applying scribing pressure from the back, and the simple substances of the light-emitting diodes 5 are acquired. Accordingly, deterioration due to the assembly of the semiconductor device can be prevented.</p>
申请公布号 JPS61216443(A) 申请公布日期 1986.09.26
申请号 JP19850059261 申请日期 1985.03.22
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TANPO TOSHIHARU
分类号 H01L21/301;H01L21/306;H01L21/78 主分类号 H01L21/301
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